Claes Thelander
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- 2012
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
(2012) MRS Fall Meeting, 2012
- Contribution to conference › Abstract
-
Mark
Nonlinear Thermopower in Quantum Dots
(2012) ICPS 2012
- Contribution to conference › Abstract
-
Mark
InAs Nanowires for High Frequency Electronics
(2012) GigaHertz Symposium 2012
- Contribution to conference › Abstract
-
Mark
High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012
- Contribution to conference › Paper, not in proceeding
- 2011
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
- Contribution to journal › Article
-
Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
- Contribution to journal › Article
-
Mark
Dual-gate induced InP nanowire diode
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
