Lars-Erik Wernersson
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- 2016
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Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
- 2015
-
Mark
Picosecond dynamics in a millimetre-wave RTD-MOSFET wavelet generator
(
- Contribution to journal › Article
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
-
Mark
Time-Domain System for Millimeter-Wave Material Characterization
(
- Contribution to journal › Article
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Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
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Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
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Mark
Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric
(
- Contribution to journal › Article
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Mark
Narrow gap nanowires: From nanotechnology to RF-circuits on Si
(
- Contribution to journal › Article
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Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article