Lars-Erik Wernersson

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2011
Mark Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
Mandl, Bernhard ^LU ; Dey, Anil ^LU ; Stangl, Julian ; Cantoro, Mirco ; Wernersson, Lars-Erik ^LU ; Bauer, Günther ; Samuelson, Lars ^LU ; Deppert, Knut ^LU and Thelander, Claes ^LU (2011) In Journal of Crystal Growth 334(1). p.51-56
- Contribution to journal › Article
Mark 60 GHz impulse radio measurements
Ärlelid, Mats ^LU ; Ohlsson, Lars ^LU ; Egard, Mikael ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) IEEE International Conference on Ultra-Wideband (ICUWB), 2011 p.536-540
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Design of RF Properties for Vertical Nanowire MOSFETs
Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) In IEEE Transactions on Nanotechnology 10(4). p.668-673
- Contribution to journal › Article
Mark RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Johansson, Sofia ^LU ; Egard, Mikael ^LU ; Gorji, Sepideh ^LU ; Borg, Mattias ^LU ; Berg, Martin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
- Contribution to journal › Article
Mark High Transconductance Self-Aligned Gate-Last Surface Channel In_0.53Ga_0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) IEEE International Electron Devices Meeting (IEDM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Inverter circuits based on vertical InAs nanowire MOSFETs
Dey, Anil ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Gorji, Sepideh ^LU ; Jansson, Kristofer ^LU ; Johansson, Sofia ^LU ; Lind, Erik ^LU ; Persson, Karl-Magnus ^LU ; Thelander, Claes ^LU and Ärlelid, Mats ^LU , et al. (2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
Mark Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2011) 69th Device Research Conference, DRC 2011
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Timm, Rainer ^LU ; Hjort, Martin ^LU ; Fian, Alexander ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2011) 17th Conference on "Insulating Films on Semiconductors" 88. p.1091-1094
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark 15 nm diameter InAs nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) Device Research Conference (DRC), 2011 69th Annual p.21-22
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2010
Mark Doping Incorporation in InAs nanowires characterized by capacitance measurements
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Karlström, Olov ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU and Wernersson, Lars-Erik ^LU (2010) In Journal of Applied Physics 108.
- Contribution to journal › Article

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