Lars-Erik Wernersson

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2011
Mark Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
Borg, Mattias ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Ganjipour, Bahram ^LU ; Dey, Anil ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 99.
- Contribution to journal › Article
Mark Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy
Borg, Mattias ^LU ; Dick Thelander, Kimberly ^LU ; Eymery, Joel and Wernersson, Lars-Erik ^LU (2011) In Applied Physics Letters 98(11).
- Contribution to journal › Article
Mark Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
Astromskas, Gvidas ^LU ; Storm, Kristian ^LU ; Caroff, Philippe ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High Transconductance Self-Aligned Gate-Last Surface Channel In_0.53Ga_0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2011) IEEE International Electron Devices Meeting (IEDM)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
Ek, Martin ^LU ; Borg, Mattias ^LU ; Dey, Anil ^LU ; Ganjipour, Bahram ^LU ; Thelander, Claes ^LU ; Wernersson, Lars-Erik ^LU and Dick Thelander, Kimberly ^LU (2011) In Crystal Growth & Design 11(10). p.4588-4593
- Contribution to journal › Article
Mark 15 nm diameter InAs nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Borgström, Magnus ^LU ; Borg, Mattias ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2011) Device Research Conference (DRC), 2011 69th Annual p.21-22
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Inverter circuits based on vertical InAs nanowire MOSFETs
Dey, Anil ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Gorji, Sepideh ^LU ; Jansson, Kristofer ^LU ; Johansson, Sofia ^LU ; Lind, Erik ^LU ; Persson, Karl-Magnus ^LU ; Thelander, Claes ^LU and Ärlelid, Mats ^LU , et al. (2011) Swedish System-on-Chip Conference, SSoCC 2011
- Contribution to conference › Paper, not in proceeding
Mark Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2011) 69th Device Research Conference, DRC 2011
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopy
Timm, Rainer ^LU ; Hjort, Martin ^LU ; Fian, Alexander ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2011) 17th Conference on "Insulating Films on Semiconductors" 88. p.1091-1094
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2010
Mark Coherent V-Band Pulse Generator for Impulse Radio BPSK
Ärlelid, Mats ^LU ; Egard, Mikael ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2010) In IEEE Microwave and Wireless Components Letters 20(7). p.414-416
- Contribution to journal › Article

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