Lars-Erik Wernersson

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2018
Mark Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) 76th Device Research Conference p.137-138
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
- Contribution to journal › Letter
Mark Reflection of Coherent Millimeter-Wave Wavelets on Dispersive Materials : A Study on Porcine Skin
Heunisch, Sebastian ^LU ; Ohlsson, Lars ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Transactions on Microwave Theory and Techniques 66(4). p.2047-2054
- Contribution to journal › Article
Mark A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
Jonsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.935-938
- Contribution to journal › Article
Mark RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Fabrication of Tunnel Field-Effect Transistors
Krishnaraja, Abinaya ^LU ; Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
Zhang, J. ; Alessandri, C. ; Fay, P. ; Seabaugh, A. ; Ytterdal, T. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 2018-March. p.1-2
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) 63rd IEEE International Electron Devices Meeting, IEDM 2017 Part F134366. p.1-17
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Troian, Andrea ^LU ; Knutsson, Johan V. ^LU ; McKibbin, Sarah R. ^LU ; Yngman, Sofie ^LU ; Babadi, Aein S. ^LU ; Wernersson, Lars Erik ^LU ; Mikkelsen, Anders ^LU and Timm, Rainer ^LU (2018) In AIP Advances 8(12).
- Contribution to journal › Article

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