Zhongyunshen Zhu (Former)
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- 2023
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
- Contribution to journal › Article
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
- Contribution to journal › Article
-
Mark
Sensing single domains and individual defects in scaled ferroelectrics
- Contribution to journal › Article
- 2022
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
- Contribution to journal › Article
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
- Contribution to journal › Article
- 2020
-
Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
- Contribution to journal › Article
-
Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
- Contribution to journal › Article
-
Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
- Contribution to journal › Article
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