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- 2014
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Mark
Time-Resolved X-ray Diffraction Investigation of the Modified Phonon Dispersion in InSb Nanowires.
- Contribution to journal › Article
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Mark
Vertical III-V nanowire device integration on Si(100)
- Contribution to journal › Article
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Mark
III-V semiconductor nanowires for future devices
(2014) 17th Design, Automation and Test in Europe, DATE 2014
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
- Contribution to journal › Article
-
Mark
Frequency Modulation in mm-Wave InGaAs MOSFET/RTD Wavelet Generators
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
- Contribution to journal › Article
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Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
- Contribution to journal › Article
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Mark
Diameter Limitation in Growth of III-Sb-Containing Nanowire Heterostructures.
- Contribution to journal › Article
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Mark
Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
- Contribution to journal › Article
