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2023
Mark Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
Winge, David ^LU ; Borgström, Magnus ^LU ; Lind, Erik ^LU and Mikkelsen, Anders ^LU (2023) In Neuromorphic Computing and Engineering 3(3).
- Contribution to journal › Article
2021
Mark Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Fiordaliso, Elisabetta Maria ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU and Wernersson, Lars Erik ^LU (2021) In ACS Applied Electronic Materials 3(12). p.5240-5247
- Contribution to journal › Article
2020
Mark Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Kilpi, Olli-Pekka ^LU and Wernersson, Lars-Erik ^LU (2020) In Solid-State Electronics 171.
- Contribution to journal › Article
2019
Mark Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
Hellenbrand, Markus ^LU ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) In Microelectronic Engineering
- Contribution to journal › Article
2018
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
Mark Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
- Contribution to journal › Letter
Mark A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
Netsu, Seiko ^LU ; Hellenbrand, Markus ^LU ; Zota, Cezar B. ^LU ; Miyamoto, Yasuyuki and Lind, Erik ^LU (2018) In IEEE Journal of the Electron Devices Society 6. p.408-412
- Contribution to journal › Article
2016
Mark High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Zota, Cezar B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2016) In IEEE Electron Device Letters 37(10). p.1264-1267
- Contribution to journal › Article
Mark Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
- Contribution to journal › Letter
2015
Mark High Frequency InGaAs Nanowire MOSFETs
Lind, E. ^LU (2015) 37th IEEE International Symposium on Workload Characterization, IISWC 2015
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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