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2017
Mark Mixed-domain gating algorithm for time-domain characterisation of millimetre-wave antennas
Ohlsson, Lars ^LU ; Vakili, Iman ^LU ; Sjoberg, Daniel ^LU and Wernersson, Lars Erik ^LU (2017) 47th European Microwave Conference, EuMC 2017 2017-January. p.256-259
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Wu, Jun ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Nano Letters 17(10). p.6006-6010
- Contribution to journal › Article
Mark Junctionless tri-gate InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) In Japanese Journal of Applied Physics 56(12).
- Contribution to journal › Article
Mark The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
Schenk, A. ; Sant, S. ; Moselund, K. ; Riel, H. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2016
Mark RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Wu, Jun ^LU ; Jansson, Kristofer ^LU ; Shiri Babadi, Aein ^LU ; Berg, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
- Contribution to journal › Article
Mark Ballistic modeling of InAs nanowire transistors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In Solid-State Electronics 115. p.47-53
- Contribution to journal › Article
Mark Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
Thompson, Michael D ; Alhodaib, Aiyeshah ; Craig, Adam P ; Robson, Alex ; Aziz, Atif ; Krier, Anthony ; Svensson, Johannes ^LU ; Wernersson, Lars-Erik ^LU ; Sanchez, Ana M and Marshall, Andrew R J (2016) In Nano Letters 16(1). p.182-187
- Contribution to journal › Article
Mark InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
Memisevic, Elvedin ^LU ; Svensson, J. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2016) 21st IEEE Silicon Nanoelectronics Workshop, SNW 2016 p.154-155
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High-frequency InGaAs tri-gate MOSFETs with f_max of 400 GHz
Zota, C. B. ^LU ; Lindelöw, F. ^LU ; Wernersson, L. E. ^LU and Lind, E. ^LU (2016) In Electronics Letters 52(22). p.1869-1871
- Contribution to journal › Article
Mark InGaAs nanowire MOSFETs with I_ON = 555 μa/μm at I_OFF = 100 nA/μm and V_DD = 0.5 v
Zota, Cezar B. ^LU ; Lindelöw, Fredrik ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

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