1 – 10 of 14
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2022
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
(
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
(
- Contribution to journal › Article
-
Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
2022) In Applied Surface Science(
- Contribution to journal › Article
- 2021
-
Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
-
Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
- 2020
-
Mark
Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
(
- Contribution to journal › Article
- 2018
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
- 2016
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
- 2013
-
Mark
Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
(
- Contribution to journal › Article
- 2012
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
(
- Contribution to journal › Article