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- 2017
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Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
2017) p.38-41(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
Junctionless tri-gate InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
(
- Contribution to journal › Letter
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article