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- 2017
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Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
2017) 75th Annual Device Research Conference, DRC 2017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Record performance for junctionless transistors in InGaAs MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
- 2016
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Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
(
- Contribution to journal › Article
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Mark
Ballistic modeling of InAs nanowire transistors
(
- Contribution to journal › Article
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Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
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Mark
High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
(
- Contribution to journal › Article
-
Mark
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
(
- Contribution to journal › Article