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- 2023
-
Mark
On the thermal conductivity anisotropy in wurtzite GaN
(
- Contribution to journal › Article
- 2022
-
Mark
Mg-doping and free-hole properties of hot-wall MOCVD GaN
(
- Contribution to journal › Article
-
Mark
Incorporation of Magnesium into GaN Regulated by Intentionally Large Amounts of Hydrogen during Growth by MOCVD
(
- Contribution to journal › Article
-
Mark
Infrared-active phonon modes and static dielectric constants in -(AlxGa 1-x)2O3(0.18 ≤ x ≤ 0.54) alloys
(
- Contribution to journal › Article
-
Mark
Terahertz electron paramagnetic resonance generalized spectroscopic ellipsometry : The magnetic response of the nitrogen defect in 4H-SiC
(
- Contribution to journal › Article
-
Mark
Epitaxial growth of
β
-Ga
2
O
3
by hot-wall MOCVD
(
- Contribution to journal › Article
-
Mark
Linear strain and stress potential parameters for the three fundamental band to band transitions in β-Ga2O3
(
- Contribution to journal › Article
-
Mark
Enhancement of 2DEG effective mass in AlN/Al0.78Ga0.22N high electron mobility transistor structure determined by THz optical Hall effect
(
- Contribution to journal › Article
-
Mark
Doped semiconducting polymer nanoantennas for tunable organic plasmonics
(
- Contribution to journal › Article
-
Mark
Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN : Understanding Nucleation and Design of Growth Strategies
(
- Contribution to journal › Article