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- 2023
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
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Mark
The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
2023) In Advanced Materials(
- Contribution to journal › Article
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Mark
Switchable Broadband Terahertz Absorbers Based on Conducting Polymer-Cellulose Aerogels
2023) In Advanced Science(
- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
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- Contribution to journal › Article
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Mark
On the thermal conductivity anisotropy in wurtzite GaN
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- Contribution to journal › Article
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Mark
Low Al-content n-type AlxGa1−xN layers with a high-electron-mobility grown by hot-wall metalorganic chemical vapor deposition
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- Contribution to journal › Article
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Mark
Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
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- Contribution to journal › Article
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Mark
Thermal conductivity of ScxAl1−xN and YxAl1−xN alloys
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- Contribution to journal › Article
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Mark
Tuning of Quasi-Vertical GaN FinFETs Fabricated on SiC Substrates
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- Contribution to journal › Article