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- 2022
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Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
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- Contribution to journal › Article
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Advantages of binary stochastic synapses for hardware spiking neural networks with realistic memristors
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- Contribution to journal › Article
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Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Template-Assisted Selective Epitaxy of InAs on W
2022) 2022 Compound Semiconductor Week, CSW 2022(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Oxygen relocation during HfO2 ALD on InAs
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- Contribution to journal › Article
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
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- Contribution to journal › Article
- 2021
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Mark
Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation
2021) 15th European Microwave Integrated Circuits Conference, EuMIC 2020 In EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference p.85-88(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Optimization of Near-Surface Quantum Well Processing
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- Contribution to journal › Article
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
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- Contribution to journal › Article
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
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- Contribution to journal › Article