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- 2013
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
- Contribution to journal › Article
-
Mark
Surface and core contribution to 1/f-noise in InAs nanowire metal-oxide-semiconductor field-effect transistors
- Contribution to journal › Article
-
Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
- Contribution to journal › Article
-
Mark
Novel Processing and Electrical Characterization of Nanowires
(2013)
- Thesis › Doctoral thesis (compilation)
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
- Contribution to journal › Published meeting abstract
-
Mark
Performance Evaluation of III–V Nanowire Transistors
- Contribution to journal › Article
-
Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
(2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
- Contribution to journal › Article
-
Mark
Drastically increased absorption in vertical semiconductor nanowire arrays: A non-absorbing dielectric shell makes the difference
- Contribution to journal › Article
