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- 2017
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
-
Mark
Phase diagrams for understanding gold-seeded growth of GaAs and InAs nanowires
- Contribution to journal › Article
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
-
Mark
Parallel-Coupled Quantum Dots in InAs Nanowires
- Contribution to journal › Article
-
Mark
Electronic Structure Changes Due to Crystal Phase Switching at the Atomic Scale Limit
- Contribution to journal › Article
- 2016
-
Mark
Ballistic modeling of InAs nanowire transistors
- Contribution to journal › Article
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
- Contribution to journal › Article
-
Mark
Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
(2016) In Lund University Faculty of Medicine Doctoral Dissertation Series
- Thesis › Doctoral thesis (monograph)
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- Contribution to journal › Letter
-
Mark
Electrical Characterization of III-V Nanostructure
(2016)
- Thesis › Doctoral thesis (compilation)
