Nano Electronics
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- 2025
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Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
2025) In Physica Status Solidi (A) Applications and Materials Science(
- Contribution to journal › Article
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Mark
Gate Layout and Process Reliability Co-Optimization in High-Speed Vertical III–V Nanowire Metal-Oxide-Semiconductor Field-Effect Transistor Technology
2025) In Physica Status Solidi (A) Applications and Materials Science(
- Contribution to journal › Article
- 2024
-
Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
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- Contribution to journal › Article
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
2024) In IEEE Transactions on Electron Devices(
- Contribution to journal › Article
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Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
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- Contribution to journal › Article
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Mark
Demonstrating reconfigurability in water-based electromagnetic devices using a 3D-printed siphon
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- Contribution to journal › Article
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Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
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Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
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- Contribution to journal › Article
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Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
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- Contribution to journal › Article
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Mark
Gate-controlled near-surface Josephson junctions
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- Contribution to journal › Article