Markus Hellenbrand (Former)
11 – 20 of 21
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=""
width=""
height=""
allowtransparency="true"
frameborder="0">
</iframe>
- 2018
-
Mark
Capacitance Measurements in Vertical III-V Nanowire TFETs
- Contribution to journal › Letter
-
Mark
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs
- Contribution to journal › Article
- 2017
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
- Contribution to journal › Letter
-
Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
(2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
(2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
-
Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55
- Contribution to journal › Article
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
(2017) Conference on Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
