Erik Lind

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2011
Mark Self-aligned gate-last surface channel In_0.53Ga_0.47As MOSFET with selectively regrown source and drain contact layers
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Borg, B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2011) 69th Device Research Conference, DRC 2011
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2010
Mark Coherent V-Band Pulse Generator for Impulse Radio BPSK
Ärlelid, Mats ^LU ; Egard, Mikael ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2010) In IEEE Microwave and Wireless Components Letters 20(7). p.414-416
- Contribution to journal › Article
Mark Gated Tunnel Diode with a Reactive Bias Stabilizing Network for 60 GHz Impulse Radio Implementations
Egard, Mikael ^LU ; Ärlelid, Mats ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2010) Device Research Conference (DRC) p.161-162
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark High Frequency Performance of Vertical InAs Nanowire MOSFET
Lind, Erik ^LU ; Egard, Mikael ^LU ; Johansson, Sofia ^LU ; Johansson, Anne-Charlotte ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Persson, Karl-Magnus ^LU ; Dey, Anil ^LU and Wernersson, Lars-Erik ^LU (2010) 22nd International Conference on Indium Phosphide and Related Materials
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Low-frequency noise in vertical InAs nanowire FETs
Persson, Karl-Magnus ^LU ; Lind, Erik ^LU ; Dey, Anil ^LU ; Thelander, Claes ^LU ; Sjöland, Henrik ^LU and Wernersson, Lars-Erik ^LU (2010) In IEEE Electron Device Letters 31(5). p.428-430
- Contribution to journal › Article
Mark Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
Egard, Mikael ^LU ; Johansson, Sofia ^LU ; Johansson, Anne-Charlotte ; Persson, Karl-Magnus ^LU ; Dey, Anil ^LU ; Borg, Mattias ^LU ; Thelander, Claes ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2010) In Nano Letters 10(3). p.809-812
- Contribution to journal › Article
Mark III-V Nanowires-Extending a Narrowing Road
Wernersson, Lars-Erik ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU and Samuelson, Lars ^LU (2010) In Proceedings of the IEEE 98(12). p.2047-2060
- Contribution to journal › Article
Mark Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Timm, Rainer ^LU ; Alexander, Fian ; Hjort, Martin ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Andersen, Jesper N ^LU ; Wernersson, Lars-Erik ^LU and Mikkelsen, Anders ^LU (2010) In Applied Physics Letters 97.
- Contribution to journal › Letter
Mark Temperature dependent properties of InSb and InAs nanowire field-effect transistors
Nilsson, Henrik ^LU ; Caroff, Philippe ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Karlström, Olov ^LU and Wernersson, Lars-Erik ^LU (2010) In Applied Physics Letters 96(15).
- Contribution to journal › Article
Mark Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
Lind, Erik ^LU ; Niquet, Yann-Michel ; Mera, Hector and Wernersson, Lars-Erik ^LU (2010) In Applied Physics Letters 96(23).
- Contribution to journal › Article

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