Erik Lind

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2017
Mark First InGaAs lateral nanowire MOSFET RF noise measurements and model
Ohlsson, Lars ^LU ; Lindelow, Fredrik ^LU ; Zota, Cezar B. ^LU ; Ohlrogge, Matthias ; Merkle, Thomas ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
Kilpi, Olli Pekka ^LU ; Svensson, Johannes ^LU ; Wu, Jun ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) In Nano Letters 17(10). p.6006-6010
- Contribution to journal › Article
Mark Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters p.1661-1664
- Contribution to journal › Letter
Mark Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
Mark Gated Hall effect measurements on selectively grown InGaAs nanowires
Lindelöw, F. ^LU ; Zota, C. B. ^LU and Lind, E. ^LU (2017) In Nanotechnology 28(20).
- Contribution to journal › Article
Mark Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Persson, Axel ^LU ; Sant, Saurabh ; Schenk, Andreas ; Svensson, Johannes ^LU ; Wallenberg, Reine ^LU and Wernersson, Lars-Erik ^LU (2017) In Nano Letters
- Contribution to journal › Letter
Mark Junctionless tri-gate InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) In Japanese Journal of Applied Physics 56(12).
- Contribution to journal › Article

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