Erik Lind
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- 2017
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Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
- Contribution to journal › Article
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Mark
First InGaAs lateral nanowire MOSFET RF noise measurements and model
(2017) 75th Annual Device Research Conference, DRC 2017
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Record performance for junctionless transistors in InGaAs MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
- Contribution to journal › Letter
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
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Mark
Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
(2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
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Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
(2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
