Erik Lind
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- 2016
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Mark
Size-effects in indium gallium arsenide nanowire field-effect transistors
- Contribution to journal › Article
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Mark
High frequency III-V nanowire MOSFETs
- Contribution to journal › Scientific review
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Mark
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
- Contribution to journal › Article
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Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
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Mark
Single suspended InGaAs nanowire MOSFETs
- Contribution to journal › Article
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Mark
Effect of Gate Voltage Stress on InGaAs MOSFET with HfO2 or Al2O3 Dielectric
- Contribution to journal › Article
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Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
- Contribution to journal › Article
- 2015
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Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
- Contribution to journal › Article
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Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
- Contribution to journal › Article
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Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
- Contribution to journal › Article
