Lars-Erik Wernersson
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- 2017
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Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
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Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
(2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
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Mark
Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
- Contribution to journal › Letter
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
- Contribution to journal › Article
-
Mark
Junctionless tri-gate InGaAs MOSFETs
- Contribution to journal › Article
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Mark
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
(2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
- Contribution to journal › Article
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Mark
Ballistic modeling of InAs nanowire transistors
- Contribution to journal › Article
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Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
- Contribution to journal › Article
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Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- Contribution to journal › Letter
