Lars-Erik Wernersson
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- 2017
-
Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
- Contribution to journal › Article
-
Mark
A transmission line model for co-designed slot-coupled dielectric resonator antennas
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Increased absorption in InAsSb nanowire clusters through coupled optical modes
- Contribution to journal › Article
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InGaAs tri-gate MOSFETs with record on-current
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Properties of III-V nanowires : MOSFETs and TunnelFETs
(2017) 2017 Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 p.99-100
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
- Contribution to journal › Article
-
Mark
Ballistic modeling of InAs nanowire transistors
- Contribution to journal › Article
-
Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
- Contribution to journal › Article
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
