Elvedin Memisevic (Former)

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2018
Mark RF Characterisation of Vertical III-V Nanowire Tunnel FETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) Swedish Microwave Days 2018
- Contribution to conference › Paper, not in proceeding
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
2017
Mark Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters p.1661-1664
- Contribution to journal › Letter
Mark Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Berg, Martin ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
Mark Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and I_on = 10 μA/μm for I_off = 1 nA/μm at V_DS = 0.3 V
Memisevic, E. ^LU ; Svensson, J. ^LU ; Hellenbrand, M. ^LU ; Lind, E. ^LU and Wernersson, L. E. ^LU (2017) 62nd IEEE International Electron Devices Meeting, IEDM 2016 p.1-19
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical III-V Nanowire Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU (2017)
- Thesis › Doctoral thesis (compilation)
Mark Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
Mark Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Persson, Axel ^LU ; Sant, Saurabh ; Schenk, Andreas ; Svensson, Johannes ^LU ; Wallenberg, Reine ^LU and Wernersson, Lars-Erik ^LU (2017) In Nano Letters
- Contribution to journal › Letter