Elvedin Memisevic (Former)

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2018
Mark Projected performance of experimental InAs/GaAsSb/GaSb TFET as millimeter-wave detector
Zhang, J. ; Alessandri, C. ; Fay, P. ; Seabaugh, A. ; Ytterdal, T. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2018) 2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 2018-March. p.1-2
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In Nanotechnology 29(43).
- Contribution to journal › Article
2017
Mark Vertical III-V Nanowire Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU (2017)
- Thesis › Doctoral thesis (compilation)
Mark Random telegraph signal noise in tunneling field-effect transistors with S below 60 mV/decade
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters p.1661-1664
- Contribution to journal › Letter
Mark Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Berg, Martin ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
Mark Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) Compound Semiconductor Week 2017
- Contribution to conference › Paper, not in proceeding
Mark The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
Schenk, A. ; Sant, S. ; Moselund, K. ; Riel, H. ; Memisevic, E. ^LU and Wernersson, L. E. ^LU (2017) 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017 2017-September. p.273-276
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
Memisevic, Elvedin ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU ; Persson, Axel ^LU ; Sant, Saurabh ; Schenk, Andreas ; Svensson, Johannes ^LU ; Wallenberg, Reine ^LU and Wernersson, Lars-Erik ^LU (2017) In Nano Letters
- Contribution to journal › Letter