Lars-Erik Wernersson
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- 2018
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Mark
Pulse-Distortion Analysis for Millimeter-Wave Time-Domain Material Identification
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Sub-100-nm gate-length scaling of vertical InAs/InGaAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
(
- Contribution to journal › Article
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Mark
RF Characterisation of Vertical III-V Nanowire Tunnel FETs
2018) Swedish Microwave Days 2018(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
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Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Impact of Non-idealities on the Performance of InAs/(In)GaAsSb/GaSb Tunnel FETs
2018) In Composants nanoélectroniques(
- Contribution to journal › Article
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Mark
Codesign of Compact III-V Millimeter-Wave Wavelet Transmitters with On-Chip Antennas
(
- Contribution to journal › Article
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Mark
Effect of Gate Oxide Defects on Tunnel Transistor RF Performance
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
CMOS Integration Based on All-III-V Materials
2018) Swedish Microwave Days 2018(
- Contribution to conference › Abstract