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- 2017
-
Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
(
- Contribution to journal › Article
-
Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
-
Mark
Size-effects in indium gallium arsenide nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
- 2015
-
Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
- 2014
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article