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- 2023
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Mark
Time evolution of surface species during the ALD of high-k oxide on InAs
(
- Contribution to journal › Article
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Mark
Low temperature atomic hydrogen annealing of InGaAs MOSFETs
(
- Contribution to journal › Article
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Mark
8-band k · p modeling of strained InxGa(1-x)As/InP heterostructure nanowires
(
- Contribution to journal › Article
- 2022
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Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
(
- Contribution to journal › Article
- 2021
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Mark
Optimization of Near-Surface Quantum Well Processing
(
- Contribution to journal › Article
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Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
- 2020
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Mark
Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
(
- Contribution to journal › Article
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
(
- Contribution to journal › Article
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Mark
Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
(
- Contribution to journal › Article
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Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
(
- Contribution to journal › Article
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Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
(
- Contribution to journal › Article
- 2019
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Mark
Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
(
- Contribution to journal › Article
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Mark
Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
2019) In Microelectronic Engineering(
- Contribution to journal › Article
- 2018
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Mark
Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
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Mark
Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
(
- Contribution to journal › Article
- 2017
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Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InGaAs tri-gate MOSFETs with record on-current
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
(
- Contribution to journal › Article
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Mark
1/f and RTS Noise in InGaAs Nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS)(
- Contribution to conference › Paper, not in proceeding
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Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
2017) In Nano Letters(
- Contribution to journal › Letter
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Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
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Mark
1/f and RTS noise in InGaAs nanowire MOSFETs
2017) Conference on Insulating Films on Semiconductors (INFOS) In Microelectronic Engineering 178. p.52-55(
- Contribution to journal › Article
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Mark
Gated Hall effect measurements on selectively grown InGaAs nanowires
(
- Contribution to journal › Article
- 2016
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High frequency III-V nanowire MOSFETs
(
- Contribution to journal › Scientific review
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Mark
Size-effects in indium gallium arsenide nanowire field-effect transistors
(
- Contribution to journal › Article
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Mark
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
(
- Contribution to journal › Article
- 2015
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
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Mark
Quantized Conduction and High Mobility in Selectively Grown InxGa1-xAs Nanowires
(
- Contribution to journal › Article
- 2014
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
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Mark
InAs nanowire MOSFETs in three-transistor configurations: single balanced RF down-conversion mixers.
(
- Contribution to journal › Article
- 2013
-
Mark
Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistors
(
- Contribution to journal › Article
- 2012
-
Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
- 2010
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
- 2006
-
Mark
Improved subthreshold slope in an InAs nanowire heterostructure field-effect transistor
(
- Contribution to journal › Article