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- 2006
-
Mark
Nanowire field effect transistor
2006) Intl Conf on Solid State Devices and Materials, Kanagawa, Japan (2006), invited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation
(
- Contribution to journal › Article
-
Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
MOVPE of InAs epitaxial overgrowth of W masks
2005) 12 Intl Conf on Narrow Gap Semiconductors, Toulouse, France (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs epitaxial lateral overgrowth of W masks
(
- Contribution to journal › Article
-
Mark
Gated tunnel diodes in nanoelectronic pulse generators
2005) Sweden-Japan Intl Workshop on Quantum Nano-Physics and Electronics, (2005)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2004
-
Mark
SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion
(
- Contribution to journal › Article
-
Mark
Nanoelectronic pulse generators based on gated resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoelectronic pulse generators for UWB applications
2004) 1st Sweden-Korea Nano-Workshop, Seoul, Korea (2004), invvited(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistor based pulsed oscillator
2004) Intl Semicond Dev Res Symp, (2004)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design of resonant tunneling permeable base transistors
2004) 2003 International Symposium on Compound Semiconductors: Post-Conference Proceedings p.158-163(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Resonant tunneling permeable base transistors with high transconductance
(
- Contribution to journal › Article
-
Mark
3D metal-semiconductor devices and other nanoelectronic devices
2004) NSF/SSF Workshop on Nanoscience and Nanotechnology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
-
Mark
InP hot electron transistors with a buried metal gate
(
- Contribution to journal › Article
-
Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
-
Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
-
Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
-
Mark
Highly functional tunnelling devices integrated in 3D
(
- Contribution to journal › Article
-
Mark
Tunneling spectroscopy of a quantum dot through a single impurity
(
- Contribution to journal › Article
-
Mark
Resonant Tunneling Permeable Base Transistor for RF applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
(
- Contribution to journal › Article
-
Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Three-dimensional integrated resonant tunneling transistor with multiple peaks
(
- Contribution to journal › Article
-
Mark
Nanoscale tungsten aerosol particles embedded in GaAs
(
- Contribution to journal › Article
-
Mark
Carrier dynamics around nano-scale Schottky contacts: a femtosecond near-field study
(
- Contribution to journal › Article
-
Mark
A study of estimation method for conduction band offset in semiconductor heterostructure by using triple-barrier resonant tunneling diodes
(
- Contribution to journal › Article
-
Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
-
Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(
- Contribution to journal › Article
-
Mark
Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
(
- Contribution to journal › Article
-
Mark
Designed emitter states in resonant tunneling through quantum dots
(
- Contribution to journal › Article
-
Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
-
Mark
Coupling between lateral modes in a vertical resonant tunneling structure
(
- Contribution to journal › Article
-
Mark
Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Circuits and devices with integrated VFETs and RTDs
2002) p.205-208(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Stacking of heterostructures and metallic elements for a submicron resonant tunneling transistor
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
(
- Contribution to journal › Article
-
Mark
Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide
(
- Contribution to journal › Article
-
Mark
A resonant tunneling permeable base transistor with Al-free tunneling barriers
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
(
- Contribution to journal › Article
- 1998
-
Mark
Three-Dimensional Metal-Semiconductor Heterostructures for Device Applications
1998)(
- Thesis › Doctoral thesis (compilation)
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