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2024
Mark Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
Gustafsson, Anders ^LU ; Persson, Axel R. ; Persson, Per O.Å. ; Darakchieva, Vanya ^LU ; Bi, Zhaoxia ^LU and Samuelson, Lars ^LU (2024) In Nanotechnology 35(25).
- Contribution to journal › Article
Mark Hot Carrier Nanowire Transistors at the Ballistic Limit
Kumar, Mukesh ^LU ; Nowzari, Ali ^LU ; Persson, Axel R. ^LU ; Jeppesen, Sören ^LU ; Wacker, Andreas ^LU ; Bastard, Gerald ; Wallenberg, Reine L. ^LU ; Capasso, Federico ; Maisi, Ville F. ^LU and Samuelson, Lars ^LU (2024) In Nano Letters 24(26). p.7948-7952
- Contribution to journal › Article
2023
Mark Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
Persson, Axel R. ; Gustafsson, Anders ^LU ; Bi, Zhaoxia ^LU ; Samuelson, Lars ^LU ; Darakchieva, Vanya ^LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
- Contribution to journal › Article
Mark Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization
Chen, Ding Yuan ; Persson, Axel R. ; Darakchieva, Vanya ^LU ; Persson, Per O.Å. ; Chen, Jr Tai and Rorsman, Niklas (2023) In Semiconductor Science and Technology 38(10).
- Contribution to journal › Article
Mark Observations of very fast electron traps at SiC/high-κ dielectric interfaces
Vidarsson, Arnar M. ; Persson, Axel R. ; Chen, Jr Tai ; Haasmann, Daniel ; Hassan, Jawad Ul ; Dimitrijev, Sima ; Rorsman, Niklas ; Darakchieva, Vanya ^LU and Sveinbjörnsson, Einar I. (2023) In APL Materials 11(11).
- Contribution to journal › Article
Mark Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in Al_xGa_1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
Knight, Sean ^LU ; Richter, Steffen ^LU ; Papamichail, Alexis ; Kühne, Philipp ; Armakavicius, Nerijus ; Guo, Shiqi ; Persson, Axel R. ; Stanishev, Vallery ; Rindert, Viktor ^LU and Persson, Per O.Å. , et al. (2023) In Journal of Applied Physics 134(18).
- Contribution to journal › Article
2022
Mark Compositionally graded channel HEMTs towards improved linearity for low-noise RF amplifiers
Papamichail, Alexis ; Persson, Axel R. ; Ricther, Steffen ; Kuhne, Philipp ; Persson, Per O.A. ; Thorsell, Mattias ; Hjelmgren, Hans ; Rorsman, Niklas and Darakchieva, Vanya ^LU (2022) 2022 Compound Semiconductor Week, CSW 2022
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance
Chen, Ding-Yuan ; Persson, Axel R ; Wen, Kai-Hsin ; Sommer, Daniel ; Grünenpütt, Jan ; Blanck, Hervé ; Thorsell, Mattias ; Kordina, Olof ; Darakchieva, Vanya ^LU and Persson, Per O Å , et al. (2022) In Semiconductor Science and Technology 37(3).
- Contribution to journal › Article
Mark Epitaxial growth of β -Ga 2 O 3 by hot-wall MOCVD
Gogova, Daniela ; Ghezellou, Misagh ; Tran, Dat Q. ; Richter, Steffen ^LU ; Papamichail, Alexis ; Hassan, Jawad Ul ; Persson, Axel R. ^LU ; Persson, Per O. Å. ; Kordina, Olof and Monemar, Bo ^LU , et al. (2022) In AIP Advances 12(5).
- Contribution to journal › Article
2021
Mark Time-resolved compositional mapping during in situ TEM studies
Persson, Axel R. ^LU ; Tornberg, Marcus ^LU ; Sjökvist, Robin ^LU and Jacobsson, Daniel ^LU (2021) In Ultramicroscopy 222.
- Contribution to journal › Article

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