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- 2020
-
Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
- Contribution to journal › Article
-
Mark
Mobility of near surface MOVPE grown InGaAs/InP quantum wells
- Contribution to journal › Article
-
Mark
III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
- Contribution to journal › Article
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
- Contribution to journal › Article
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
- Contribution to journal › Article
- 2019
-
Mark
Transition to the quantum hall regime in InAs nanowire cross-junctions
- Contribution to journal › Article
-
Mark
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
- Contribution to journal › Article
-
Mark
Integration of InSb on Si by Rapid Melt Growth
(2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Record performance for junctionless transistors in InGaAs MOSFETs
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
