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- 2024
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Mark
Cryogenic Evaluation of Resistive Random Access Memory With Enhanced Endurance at 14 K
(2024) In IEEE Transactions on Electron Devices
- Contribution to journal › Article
-
Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
- Contribution to journal › Article
-
Mark
Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
- Contribution to journal › Article
-
Mark
RF Characterization of Ferroelectric MOS Capacitors
- Contribution to journal › Article
-
Mark
Multifunctional Reconfigurable Operations in an Ultra-Scaled Ferroelectric Negative Transconductance Transistor
- Contribution to journal › Article
- 2023
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
- Contribution to journal › Article
-
Mark
Geometric control of diffusing elements on InAs semiconductor surfaces via metal contacts
- Contribution to journal › Article
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
- Contribution to journal › Article
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Mark
Effects of Interface Oxidation on Noise Properties and Performance in III–V Vertical Nanowire Memristors
- Contribution to journal › Article
