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2017
Mark Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Berg, Martin ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
Mark Record performance for junctionless transistors in InGaAs MOSFETs
Zota, Cezar B. ^LU ; Borg, Mattias ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.34-35
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with I_on = 330 μa/μm at I_off = 100 nA/μm and V_D = 0.5 v
Kilpi, Olli Pekka ^LU ; Wu, Jun ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2017) 37th Symposium on VLSI Technology, VLSI Technology 2017 p.36-37
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2016
Mark RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Wu, Jun ^LU ; Jansson, Kristofer ^LU ; Shiri Babadi, Aein ^LU ; Berg, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
- Contribution to journal › Article
Mark Ballistic modeling of InAs nanowire transistors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In Solid-State Electronics 115. p.47-53
- Contribution to journal › Article
Mark Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
Thompson, Michael D ; Alhodaib, Aiyeshah ; Craig, Adam P ; Robson, Alex ; Aziz, Atif ; Krier, Anthony ; Svensson, Johannes ^LU ; Wernersson, Lars-Erik ^LU ; Sanchez, Ana M and Marshall, Andrew R J (2016) In Nano Letters 16(1). p.182-187
- Contribution to journal › Article
Mark High-frequency InGaAs tri-gate MOSFETs with f_max of 400 GHz
Zota, C. B. ^LU ; Lindelöw, F. ^LU ; Wernersson, L. E. ^LU and Lind, E. ^LU (2016) In Electronics Letters 52(22). p.1869-1871
- Contribution to journal › Article
Mark Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
Berg, Martin ^LU ; Persson, Karl-Magnus ^LU ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) 61st IEEE International Electron Devices Meeting, IEDM 2015 2016-February.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
Mark Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Wu, Jun ^LU ; Babadi, Aein Shiri ^LU ; Jacobsson, Daniel ^LU ; Colvin, Jovana ^LU ; Yngman, Sofie ^LU ; Timm, Rainer ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In Nano Letters 16(4). p.2418-2425
- Contribution to journal › Article

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