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- 2024
-
Mark
III-V heterostructure tunnel field-effect transistor operation at different temperature regimes
(
- Contribution to journal › Article
-
Mark
A 29.5 GHz Rectifier with 14.5 dB Dynamic Power Range for Energy Harvester Using Vertical Nanowire Tunnel FETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2023
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article
-
Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Self-Heating in Gate-All-Around Vertical III-V InAs/InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Article
-
Mark
Dynamics of Polarization Switching in Mixed Phase Ferroelectric-Antiferroelectric HZO Thin Films
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
-
Mark
Sensing single domains and individual defects in scaled ferroelectrics
(
- Contribution to journal › Article
-
Mark
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor
(
- Contribution to journal › Article