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- 2024
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Mark
Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs
2024) In IEEE Transactions on Electron Devices(
- Contribution to journal › Article
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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere
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- Contribution to journal › Article
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Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
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- Contribution to journal › Article
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Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
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High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
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- Contribution to journal › Article
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Terahertz permittivity parameters of monoclinic single crystal lutetium oxyorthosilicate
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- Contribution to journal › Article
- 2023
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Mark
Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers
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- Contribution to journal › Article
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Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
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- Contribution to journal › Article
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Observations of very fast electron traps at SiC/high-κ dielectric interfaces
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- Contribution to journal › Article
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Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article