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- 2022
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
-
Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
- Contribution to journal › Article
-
Mark
Low-Temperature Characteristics of Nanowire Network Demultiplexer for Qubit Biasing
- Contribution to journal › Article
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
- Contribution to journal › Article
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
- Contribution to journal › Article
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
- Contribution to journal › Article
-
Mark
InGaAs Nanowire and Quantum Well Devices
(2022)
- Thesis › Doctoral thesis (compilation)
-
Mark
Strained Inx Ga(1-x )As/InP near surface quantum wells and MOSFETs
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
- Contribution to journal › Article
