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- 2022
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
- Contribution to journal › Article
-
Mark
Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon
- Contribution to journal › Article
-
Mark
Top Electrode Engineering for Freedom in Design and Implementation of Ferroelectric Tunnel Junctions Based on Hf1- xZrxO2
- Contribution to journal › Article
-
Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A 5.8-GHz Rectifier Using Diode-Connected MESFET for Space Solar Power Satellite System
- Contribution to journal › Article
-
Mark
Improved Endurance of Ferroelectric HfxZr1–xO2 Integrated on InAs Using Millisecond Annealing
- Contribution to journal › Article
-
Mark
Lateral III-V Nanowire MOSFETs in Low-Noise Amplifier Stages
- Contribution to journal › Article
-
Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
- Contribution to journal › Article
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
-
Mark
InGaAs Nanowire and Quantum Well Devices
(2022)
- Thesis › Doctoral thesis (compilation)
