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- 2021
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
(
- Contribution to journal › Article
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Mark
Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2) : Raman spectroscopy and magnetic properties
(
- Contribution to journal › Article
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Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
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Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
(
- Contribution to journal › Article
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Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
(
- Contribution to journal › Article
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Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
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Mark
III-V Nanowire MOSFET High-Frequency Technology Platform
2021)(
- Thesis › Doctoral thesis (compilation)
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Mark
Millimeter-Wave Vertical III-V Nanowire MOSFET Device-To-Circuit Co-Design
(
- Contribution to journal › Article