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- 2022
-
Mark
Performance, Analysis, and Modeling of III-V Vertical Nanowire MOSFETs on Si at Higher Voltages
- Contribution to journal › Article
- 2021
-
Mark
Capacitance Scaling in In0.71Ga0.29As/InP MOSFETs with Self-Aligned a:Si Spacers
- Contribution to journal › Article
- 2020
-
Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
- 2017
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
- Contribution to journal › Article
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
- Contribution to journal › Article
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
- Contribution to journal › Article
- 2015
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
- Contribution to journal › Article
-
Mark
Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
- Contribution to journal › Article
