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2020
Mark Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
Jönsson, Adam ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In IEEE Transactions on Electron Devices 67(10). p.4118-4122
- Contribution to journal › Article
2017
Mark InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Transactions on Electron Devices 64(11). p.4746-4751
- Contribution to journal › Article
2016
Mark RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
Wu, Jun ^LU ; Jansson, Kristofer ^LU ; Shiri Babadi, Aein ^LU ; Berg, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
- Contribution to journal › Article
Mark Amplifier Design Using Vertical InAs Nanowire MOSFETs
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2016) In IEEE Transactions on Electron Devices 63(6). p.2353-2359
- Contribution to journal › Article
Mark Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
Moselund, Kirsten Emilie ; Cutaia, Davide ; Schmid, Heinz ; Borg, Mattias ^LU ; Sant, Saurabh ; Schenk, Andreas and Riel, Heike (2016) In IEEE Transactions on Electron Devices 63(11). p.4233-4239
- Contribution to journal › Article
Mark Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
Sant, Saurabh ; Moselund, Kirsten E. ; Cutaia, Davide ; Schmid, Heinz ; Borg, Mattias ^LU ; Riel, Heike and Schenk, Andreas (2016) In IEEE Transactions on Electron Devices 63(11). p.4240-4247
- Contribution to journal › Article
2015
Mark Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
Baikov, Andrey Yu. ; Marrelli, Chiara ^LU and Syratchev, Igor (2015) In IEEE Transactions on Electron Devices 62(10). p.3406-3412
- Contribution to journal › Article
Mark InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
Mo, Jiongjiong ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2015) In IEEE Transactions on Electron Devices 62(2). p.501-506
- Contribution to journal › Article
2014
Mark Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
Zota, Cezar ^LU ; Roll, Guntrade ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Transactions on Electron Devices 61(12). p.4078-4083
- Contribution to journal › Article
Mark Intrinsic Performance of InAs Nanowire Capacitors
Jansson, Kristofer ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2014) In IEEE Transactions on Electron Devices 61(2). p.452-459
- Contribution to journal › Article

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