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- 2016
-
Mark
RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Amplifier Design Using Vertical InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 1 : Experimental Devices
(
- Contribution to journal › Article
-
Mark
Lateral InAs/Si p-Type Tunnel FETs Integrated on Si - Part 2 : Simulation Study of the Impact of Interface Traps
(
- Contribution to journal › Article
- 2015
-
Mark
InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs
(
- Contribution to journal › Article
-
Mark
Toward High-Power Klystrons With RF Power Conversion Efficiency on the Order of 90%
(
- Contribution to journal › Article
- 2014
-
Mark
Intrinsic Performance of InAs Nanowire Capacitors
(
- Contribution to journal › Article
-
Mark
Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs
(
- Contribution to journal › Article
- 2013
-
Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
-
Mark
A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(
- Contribution to journal › Article