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2018
Mark Capacitance Measurements in Vertical III-V Nanowire TFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.943-946
- Contribution to journal › Letter
Mark A Self-aligned Gate-last Process applied to All-III-V CMOS on Si
Jonsson, Adam ^LU ; Svensson, Johannes ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.935-938
- Contribution to journal › Article
Mark Vertical nanowire TFETs with channel diameter down to 10 nm and point S MIN of 35 mV/decade
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars Erik ^LU (2018) In IEEE Electron Device Letters 39(7). p.1089-1091
- Contribution to journal › Article
2017
Mark Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
Memisevic, Elvedin ^LU ; Lind, Erik ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters p.1661-1664
- Contribution to journal › Letter
Mark Low-Frequency Noise in III-V Nanowire TFETs and MOSFETs
Hellenbrand, Markus ^LU ; Memisevic, Elvedin ^LU ; Berg, Martin ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU and Wernersson, Lars-Erik ^LU (2017) In IEEE Electron Device Letters
- Contribution to journal › Letter
2016
Mark Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
Berg, Martin ^LU ; Kilpi, Olli-Pekka ^LU ; Persson, Karl-Magnus ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(8). p.966-969
- Contribution to journal › Letter
Mark 3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors
Wu, Jun ^LU and Wernersson, Lars Erik ^LU (2016) In IEEE Electron Device Letters 37(7). p.851-854
- Contribution to journal › Article
Mark High-Performance Lateral Nanowire InGaAs MOSFETs with Improved On-Current
Zota, Cezar B. ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2016) In IEEE Electron Device Letters 37(10). p.1264-1267
- Contribution to journal › Article
Mark Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
Memisevic, Elvedin ^LU ; Svensson, Johannes ^LU ; Hellenbrand, Markus ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2016) In IEEE Electron Device Letters 37(5). p.549-552
- Contribution to journal › Letter
2014
Mark High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates
Johansson, Sofia ^LU ; Memisevic, Elvedin ^LU ; Wernersson, Lars-Erik ^LU and Lind, Erik ^LU (2014) In IEEE Electron Device Letters 35(5). p.518-520
- Contribution to journal › Article

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