Kristian Storm (Former)
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- 2019
-
Mark
InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes
2019) In Nano Letters(
- Contribution to journal › Article
- 2017
-
Mark
Simplifying Nanowire Hall Effect Characterization by Using a Three-Probe Device Design
(
- Contribution to journal › Article
-
Mark
Optimization of Current Injection in AlGaInP Core−Shell Nanowire Light-Emitting Diodes
(
- Contribution to journal › Article
- 2016
-
Mark
Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire
(
- Contribution to journal › Article
-
Mark
Radial Nanowire Light-Emitting Diodes in the (AlxGa1-x)yIn1-yP Material System.
(
- Contribution to journal › Article
-
Mark
Designed Quasi-1D Potential Structures Realized in Compositionally Graded InAs1-xPx Nanowires.
2016) In Nano Letters(
- Contribution to journal › Article
-
Mark
Doping evaluation of InP nanowires for tandem junction solar cells
(
- Contribution to journal › Article
-
Mark
Selective etching of InP in InAs/InP nanowires resulting in 11 nm nanogaps
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Length Distributions of Nanowires Growing by Surface Diffusion
(
- Contribution to journal › Article
- 2015
-
Mark
InAs Nanowire Transistors with Multiple, Independent Wrap-Gate Segments.
(
- Contribution to journal › Article
-
Mark
Study of carrier concentration in single InP nanowires by luminescence and Hall measurements
(
- Contribution to journal › Article
- 2014
-
Mark
Electron-Beam Patterning of Polymer Electrolyte Films To Make Multiple Nanoscale Gates for Nanowire Transistors
(
- Contribution to journal › Article
-
Mark
Synthesis of Doped InP Core-Shell Nanowires Evaluated Using Hall Effect Measurements.
(
- Contribution to journal › Article
-
Mark
Crystal Phase-Dependent Nanophotonic Resonances in InAs Nanowire Arrays
(
- Contribution to journal › Article
-
Mark
Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments
(
- Contribution to journal › Article
-
Mark
Bridging Electronic Barriers in InAs-Nanowires with Oligo(phenylene vinylene) Molecular Wires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Correlated Luminescence and Hall Measurements on Single Nanowires
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Selectively grown III-N μ-substrates for defect reduction and lattice matching
2014) 17th International Conference on Metalorganic Vapor Phase Epitaxy, 2014(
- Contribution to conference › Abstract
-
Mark
Electrical Characterization of Nanowire-Based Modular and Defect Free GaN µ-Substrate
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
-
Mark
Unexpected optical response i InAs nanowire arrays: crystal-phase dependent nanophotonic resonances
2014) MRS Spring Meeting, 2014(
- Contribution to conference › Abstract
- 2013
-
Mark
Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrays
(
- Contribution to journal › Article
-
Mark
Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article
-
Mark
Novel Processing and Electrical Characterization of Nanowires
2013)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Spatially resolved Hall effect measurements in core-shell InP nanowires
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
- 2012
-
Mark
Realizing Lateral Wrap-Gated Nanowire FETs: Controlling Gate Length with Chemistry Rather than Lithography.
(
- Contribution to journal › Article
-
Mark
Spatially resolved Hall effect measurement in a single semiconductor nanowire
(
- Contribution to journal › Article
-
Mark
Electrical and optical properties of InP nanowire ensemble p(+)-i-n(+) photodetectors.
(
- Contribution to journal › Article
-
Mark
A cathodoluminescence study of the influence of the seed particle preparation method on the optical properties of GaAs nanowires.
(
- Contribution to journal › Article
-
Mark
Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
A comparative study of nanowire-based infrared p+-i-n+ photodetectors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
A novel platform enabling spatially resolved electro-optical mapping of NW facets
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
(
- Contribution to journal › Article
-
Mark
Transient studies on InAs/HfO2 nanowire capacitors
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires
(
- Contribution to journal › Article
- 2010
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
A comparative study of the effect of gold seed particle preparation method on nanowire growth
(
- Contribution to journal › Article
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Probind 1-D InAs/InP nanowire quantum dots with scanning gate microscopy
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
- 2008
-
Mark
InAs nanowire metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
(
- Contribution to journal › Article