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- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
(
- Contribution to journal › Article
-
Mark
Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications
2021)(
- Thesis › Doctoral thesis (compilation)
- 2020
-
Mark
High resolution strain mapping of a single axially heterostructured nanowire using scanning X-ray diffraction
(
- Contribution to journal › Article
-
Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
(
- Contribution to journal › Article
- 2019
-
Mark
Vertical III-V Nanowire MOSFETs
2019) In Series of licentiate and doctoral theses(
- Thesis › Doctoral thesis (compilation)
-
Mark
Low-complexity III-V circuitry for millimeter wave communication and radar
2019) 2019 IEEE Globecom Workshops, GC Wkshps 2019 In 2019 IEEE Globecom Workshops, GC Wkshps 2019 - Proceedings(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2017
-
Mark
Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
(
- Contribution to journal › Article
- 2016
-
Mark
Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires
(
- Contribution to journal › Article
- 2015
-
Mark
Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogen
(
- Contribution to journal › Article
- 2014
-
Mark
Free carrier absorption and inter-subband transitions in imperfect heterostructures
(
- Contribution to journal › Scientific review
-
Mark
High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
(
- Contribution to journal › Article
- 2013
-
Mark
Conductance Enhancement of InAs/InP Heterostructure Nanowires by Surface Functionalization with Oligo(phenylene vinylene)s
(
- Contribution to journal › Article
- 2012
-
Mark
Controlling the Abruptness of Axial Heterojunctions in III-V Nanowires: Beyond the Reservoir Effect
(
- Contribution to journal › Article
-
Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
(
- Contribution to journal › Article
- 2004
-
Mark
Semiconductor nanowires for novel one-dimensional devices
(
- Contribution to journal › Article
- 2003
-
Mark
Growth of high-quality Ge epitaxial layers on Si(100)
(
- Contribution to journal › Article