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- 2010
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Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
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Mark
Low-frequency noise in vertical InAs nanowire FETs
(
- Contribution to journal › Article
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Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
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Mark
Growth Mechanism of Self-Catalyzed Group III-V Nanowires.
(
- Contribution to journal › Article
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
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Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
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Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
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Mark
Modelling and optimization of III/V transistors with matrices of nanowires
(
- Contribution to journal › Article
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Mark
Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
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Mark
Admittance Matching of 60 GHz Rectangular Dielectric Resonator Antennas for Integrated Impulse Radio
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Laboratory instructions as a cause of student dissonance
2010) LTHs 6:e Pedagogiska Inspirationskonferens, 2010(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Contribution to journal › Published meeting abstract
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Mark
Oscillator for 60 GHz Super Regenerative Receiver
(
- Contribution to journal › Published meeting abstract
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Mark
A 12.5 Gpulses/s 60 GHz bi-phase wavelet generator
2010) 34th International European Workshop on Compound Semiconductor Devices and Integrated Circuits(
- Contribution to conference › Abstract
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Mark
A 60 GHz super-regenerative oscillator for implementation in an impulse radio receiver
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
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Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(
- Contribution to journal › Article
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Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
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Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
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Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
20 GHz Wavelet Generator Using a Gated Tunnel Diode
(
- Contribution to journal › Article
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Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
-
Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
(
- Contribution to conference › Paper, not in proceeding
- 2008
-
Mark
InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042017-042017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
-
Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
(
- Contribution to journal › Article
-
Mark
InAs nanowire metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
-
Mark
Improved breakdown voltages for type I InP/InGaAs DHBTs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Guest Editorial Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
-
Mark
Development of a Vertical Wrap-Gated InAs FET
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Heterogeneous integration of InAs on W/GaAs by MOVPE
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042043-042043(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
III/V Nanowire FETs for CMOS?
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding