Solid State Physics
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- 2024
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Mark
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
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- Contribution to journal › Article
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Mark
Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique
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- Contribution to journal › Article
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Characterization of semiconductors by spectroscopic ellipsometry
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- Chapter in Book/Report/Conference proceeding › Book chapter
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Chalcogen Impurities in Silicon
2024) p.87-176(
- Chapter in Book/Report/Conference proceeding › Book chapter
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Mark
On-Chip Light Transmission between Nanoscale Optoelectronic Devices
2024) 2024 British and Irish Conference on Optics and Photonics, BICOP 2024(
- Contribution to conference › Paper, not in proceeding
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Mark
COMPREHENSIVE SEMICONDUCTOR SCIENCE AND TECHNOLOGY, SECOND EDITION : Volumes 1-3
2024) 1-3.(
- Book/Report › Book
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Mark
Achieving efficient clonal beta cells transfection using nanostraw/nanopore-assisted electroporation
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- Contribution to journal › Article
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Dynamics of VLS-Grown Si Nanowires: Insights from Molecular Dynamics Simulations on Facet Evolution, Twinning, Nucleation, and Impurity Dynamics
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- Contribution to journal › Article
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Mark
Effective uniaxial dielectric function tensor and optical phonons in (2 ¯ 01)-oriented β - Ga2 O3 films with equally distributed sixfold-rotation domains
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- Contribution to journal › Article
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Mark
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
2024) In Physica Status Solidi. A: Applications and Materials Science(
- Contribution to journal › Article