Electromagnetics and Nanoelectronics
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- 2025
-
Mark
Multi-level vertical III-V nanowire gate-all-rround ferroelectric FETs for in-memory computing
(2025)
- Contribution to conference › Abstract
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Mark
Impact of Layout on the RF Performance of Vertical In–Ga–As Nanowire MOSFETs
- Contribution to journal › Article
-
Mark
Real-Time Near-Field mmWave Measurements Using Screen-Printed Metasurfaces and IR Camera
- Contribution to journal › Article
-
Mark
Scalable Vertical In-Ga-As Nanowire MOSFET With 67 mV/dec at 126μm Gate Width
- Contribution to journal › Article
-
Mark
Characteristic mode analysis of acoustic scatterers
- Contribution to journal › Article
-
Mark
Shadow Area and Degrees of Freedom for Free-Space Communication
- Contribution to journal › Article
-
Mark
Simulating Scaling Effects in Fully Vertical GaN FinFETs
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
-
Mark
Interface Characterization of Plasma-Treated InAs Electrodes for Resistive Random-Access Memories Using Capacitance–Voltage Methods
(2025) In Physica Status Solidi (A) Applications and Materials Science
- Contribution to journal › Article
-
Mark
Performance Limits for Microstrip Patch Antennas
(2025)
- Thesis › Doctoral thesis (compilation)
-
Mark
Sum rules and physical bounds for a particulate slab
(2025) p.253-280
- Chapter in Book/Report/Conference proceeding › Book chapter
