Johannes Svensson
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- 2017
-
Mark
InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors
- Contribution to journal › Article
-
Mark
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
(2017) In Nano Letters
- Contribution to journal › Letter
-
Mark
Impact of doping and diameter on the electrical properties of GaSb nanowires
- Contribution to journal › Article
-
Mark
Increased absorption in InAsSb nanowire clusters through coupled optical modes
- Contribution to journal › Article
-
Mark
Vertical InAs/GaAsSb/GaSb tunneling field-effect transistor on Si with S = 48 mV/decade and Ion = 10 μA/μm for Ioff = 1 nA/μm at VDS = 0.3 V
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2016
-
Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
- Contribution to journal › Article
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
- Contribution to journal › Letter
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
- Contribution to journal › Letter
-
Mark
Autonomy in PhD-education – Supervising for Independence
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
