Lars-Erik Wernersson

191 – 200 of 353

show: 10
|
sort: year (new to old)

News feed Embed this list Save this search Mark all Export

Cancel

Embed this list

copy and paste the html snippet below into your own page:

<iframe src="https://lup.lub.lu.se/search/person/df6a486d-cb71-4d90-b84b-a2115a5761bf?embed=1&amp;hide_pagination=1&amp;hide_info=1&amp;hide_options=1"
  width="100%"
  height="400"
  allowtransparency="true"
  frameborder="0">
</iframe>

« previous
1
…
19
20
21
22
…
36
next »

2013
Mark Wideband and Non-Dispersive Wavelet Transmission using Leaky Lens Antenna
Vakili, Iman ^LU ; Ohlsson, Lars ^LU ; Gustafsson, Mats ^LU and Wernersson, Lars-Erik ^LU (2013) In Electronics Letters 49(5). p.321-322
- Contribution to journal › Article
Mark Diameter-Dependent Photocurrent in InAsSb Nanowire Infrared Photodetectors.
Svensson, Johannes ^LU ; Anttu, Nicklas ^LU ; Vainorius, Neimantas ^LU ; Borg, Mattias ^LU and Wernersson, Lars-Erik ^LU (2013) In Nano Letters 13(4). p.1380-1385
- Contribution to journal › Article
Mark GaSb nanowire pFETs for III-V CMOS
Dey, Anil ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU ; Ek, Martin ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2013) 71th Annual Device Research Conference (DRC) In IEEE Device Research Conference. Proceedings p.13-14
- Contribution to journal › Published meeting abstract
Mark RF reliability of gate last InGaAs nMOSFETs with high-k dielectric
Roll, Guntrade ^LU ; Egard, Mikael ^LU ; Johannson, Sofia ^LU ; Ohlsson, Lars ^LU ; Wernersson, Lars Erik ^LU and Lind, Erik ^LU (2013) 2013 IEEE International Integrated Reliability Workshop Final Report, IIRW 2013 p.38-41
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
2012
Mark Single InAs/GaSb Nanowire Low-Power CMOS Inverter
Dey, Anil ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU ; Ek, Martin ^LU and Wernersson, Lars-Erik ^LU (2012) In Nano Letters
- Contribution to journal › Article
Mark Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
Persson, Karl-Magnus ^LU ; Berg, Martin ^LU ; Borg, Mattias ^LU ; Wu, Jun ^LU ; Sjöland, Henrik ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) Device Research Conference (DRC), 2012 70th Annual In IEEE Electron Device Letters p.195-196
- Contribution to journal › Published meeting abstract
Mark High-Performance InAs Nanowire MOSFETs
Dey, Anil ^LU ; Thelander, Claes ^LU ; Lind, Erik ^LU ; Dick Thelander, Kimberly ^LU ; Borg, Mattias ^LU ; Borgström, Magnus ^LU ; Nilsson, Peter ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(6). p.791-793
- Contribution to journal › Article
Mark 1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
Delker, Collin J. ; Kim, Seongmin ; Borg, Mattias ^LU ; Wernersson, Lars-Erik ^LU and Janes, David B. (2012) In IEEE Transactions on Electron Devices 59(7). p.1980-1987
- Contribution to journal › Article
Mark High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
Egard, Mikael ^LU ; Ohlsson, Lars ^LU ; Ärlelid, Mats ^LU ; Persson, Karl-Magnus ^LU ; Borg, Mattias ^LU ; Lenrick, Filip ^LU ; Wallenberg, Reine ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
- Contribution to journal › Article
Mark High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
Dey, Anil ^LU ; Borg, Mattias ^LU ; Ganjipour, Bahram ^LU ; Ek, Martin ^LU ; Dick Thelander, Kimberly ^LU ; Lind, Erik ^LU ; Nilsson, Peter ^LU ; Thelander, Claes ^LU and Wernersson, Lars-Erik ^LU (2012) 70th Annual Device Research Conference (DRC) p.205-206
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding

« previous
1
…
19
20
21
22
…
36
next »