Johannes Svensson
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- 2017
-
Mark
Statistics of InAs/InGaAsSb/GaSb TFETs with sub-50 mV/decade operation at VDS of 0.3V
2017) Compound Semiconductor Week 2017(
- Contribution to conference › Paper, not in proceeding
- 2016
-
Mark
Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon.
(
- Contribution to journal › Article
-
Mark
Electrical Characterization and Modeling of Gate-Last Vertical InAs Nanowire MOSFETs on Si
(
- Contribution to journal › Letter
-
Mark
Self-aligned, gate-last process for vertical InAs nanowire MOSFETs on Si
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si
(
- Contribution to journal › Letter
-
Mark
InAs/GaSb vertical nanowire TFETs on Si for digital and analogue applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Autonomy in PhD-education – Supervising for Independence
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2015
-
Mark
III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si
(
- Contribution to journal › Article
-
Mark
A transmission line method for evaluation of vertical InAs nanowire contacts
(
- Contribution to journal › Article
-
Mark
Vertical InAs/GaSb Nanowire Axial TFETs Integrated on Si-substrates
2015) Compound Semiconductor Week 2015(
- Contribution to conference › Paper, not in proceeding