Karl-Magnus Persson (Former)
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- 2022
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Mark
A 4F2 Vertical Gate-all-around Nanowire Compute-in-memory Device Integrated in (1T1R) Cross-Point Arrays on Silicon
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
The Effect of Deposition Conditions on Heterointerface-Driven Band Alignment and Resistive Switching Properties
(
- Contribution to journal › Article
- 2021
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Mark
Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering
(
- Contribution to journal › Article
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Mark
High-density logic-in-memory devices using vertical indium arsenide nanowires on silicon
(
- Contribution to journal › Article
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Mark
Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM Operation
(
- Contribution to journal › Article
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Mark
Controlling Filament Stability in Scaled Oxides (3 nm) for High Endurance (>106) Low Voltage ITO/HfO2 RRAMs for Future 3D Integration
2021) 2021 Device Research Conference (DRC)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2020
-
Mark
Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
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- Contribution to journal › Article
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Mark
Cross-Point Arrays with Low-Power ITO-HfO2 Resistive Memory Cells Integrated on Vertical III-V Nanowires
(
- Contribution to journal › Article
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Mark
Low-Power Resistive Memory Integrated on III-V Vertical Nanowire MOSFETs on Silicon
(
- Contribution to journal › Article
- 2019
-
Mark
Investigation of Reverse Filament Formation in ITO/HfO2-based RRAM
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding