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- 2020
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Mark
Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1-xAs nanowire devices
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- Contribution to journal › Article
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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs
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- Contribution to journal › Article
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Vertical nanowire III–V MOSFETs with improved high-frequency gain
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- Contribution to journal › Article
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III-V nanowire MOSFETs with novel self-limiting Λ-ridge spacers for RF applications
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- Contribution to journal › Article
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High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
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- Contribution to journal › Article
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Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
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- Contribution to journal › Article
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Mobility of near surface MOVPE grown InGaAs/InP quantum wells
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- Contribution to journal › Article
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Weyl Semi-Metal-Based High-Frequency Amplifiers
2020) 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 In Technical Digest - International Electron Devices Meeting, IEDM 2019-December.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
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- Contribution to journal › Article
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Atomic Layer Deposition of Hafnium Oxide on InAs : Insight from Time-Resolved in Situ Studies
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- Contribution to journal › Article