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- 2024
-
Mark
Gate-controlled near-surface Josephson junctions
(
- Contribution to journal › Article
-
Mark
Source Design of Vertical III-V Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
-
Mark
III-V Devices for Emerging Electronic Applications
2024)(
- Thesis › Doctoral thesis (compilation)
- 2023
-
Mark
Geometrical Magnetoresistance as a Tool for Carrier Mobility Extraction in InGaAs MOSFETs
(
- Contribution to journal › Article
-
Mark
Artificial nanophotonic neuron with internal memory for biologically inspired and reservoir network computing
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Tunnel Field-Effect Transistors : A Circuit Perspective
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
gm/Id Analysis of vertical nanowire III–V TFETs
(
- Contribution to journal › Letter
-
Mark
High-k/InGaAs interface defects at cryogenic temperature
(
- Contribution to journal › Article
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Mark
Capacitance and Mobility Evaluation for Normally-Off Fully-Vertical GaN FinFETs
(
- Contribution to journal › Article
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Mark
Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
(
- Contribution to journal › Article
-
Mark
Ferroelectric Tunnel Junction Memristors for In-Memory Computing Accelerators
2023) In Advanced Intelligent Systems(
- Contribution to journal › Article
-
Mark
Low-Power, Self-Aligned Vertical InGaAsSb NW PMOS With S < 100 mV/dec
(
- Contribution to journal › Article
-
Mark
Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications
2023)(
- Thesis › Doctoral thesis (compilation)
-
Mark
Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
(
- Contribution to journal › Article
-
Mark
High Current Density Vertical Nanowire TFETs With I₆₀ > 1
μ
A/
μ
m
(
- Contribution to journal › Article