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- 2022
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Mark
Directed Self‐Assembly for Dense Vertical III–V Nanowires on Si and Implications for Gate All‐Around Deposition
- Contribution to journal › Article
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Mark
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
(2022) In Applied Surface Science
- Contribution to journal › Article
-
Mark
Template-Assisted Selective Epitaxy of InAs on W
(2022) 2022 Compound Semiconductor Week, CSW 2022
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
- Contribution to journal › Article
- 2021
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Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
- Contribution to journal › Article
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
- Contribution to journal › Article
- 2020
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Mark
Vertical nanowire III–V MOSFETs with improved high-frequency gain
- Contribution to journal › Article
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Mark
Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
- Contribution to journal › Article
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Mark
Compressively-strained GaSb nanowires with core-shell heterostructures
- Contribution to journal › Article
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
- Contribution to journal › Article
