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- 2022
-
Mark
Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
-
Mark
Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing
- Contribution to journal › Article
-
Mark
Low-Frequency Noise in Vertical InAs/InGaAs Gate-All-Around MOSFETs at 15 K for Cryogenic Applications
- Contribution to journal › Article
-
Mark
Template-Assisted Selective Epitaxy of InAs on W
(2022) 2022 Compound Semiconductor Week, CSW 2022
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2021
-
Mark
Increased Breakdown Voltage in Vertical Heterostructure III-V Nanowire MOSFETs with a Field Plate
- Contribution to journal › Article
-
Mark
Doping Profiles in Ultrathin Vertical VLS-Grown InAs Nanowire MOSFETs with High Performance
- Contribution to journal › Article
- 2020
-
Mark
Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT = 1 nm Achieving Smin= 32 mV/dec and gm/ID= 100 V-1
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A method for estimating defects in ferroelectric thin film MOSCAPs
- Contribution to journal › Article
-
Mark
Gate-Length Dependence of Vertical GaSb Nanowire p-MOSFETs on Si
- Contribution to journal › Article
-
Mark
High-Performance Vertical III-V Nanowire MOSFETs on Si with gm> 3 mS/μm
- Contribution to journal › Article
