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2020
Mark Compressively-strained GaSb nanowires with core-shell heterostructures
Zhu, Zhongyunshen ^LU ; Svensson, Johannes ^LU ; Persson, Axel R. ^LU ; Wallenberg, Reine ^LU ; Gromov, Andrei V. and Wernersson, Lars Erik ^LU (2020) In Nano Research 13(9). p.2517-2524
- Contribution to journal › Article
Mark Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Memisevic, Elvedin ^LU ; Zhu, Zhongyunshen ^LU ; Persson, Axel R. ^LU ; Lind, Erik ^LU ; Wallenberg, Lars Reine ^LU and Wernersson, Lars Erik ^LU (2020) In ACS Applied Electronic Materials 2(9). p.2882-2887
- Contribution to journal › Article
Mark Feature size control using surface reconstruction temperature in block copolymer lithography for InAs nanowire growth
Löfstrand, Anette ^LU ; Svensson, Johannes ^LU ; Wernersson, Lars Erik ^LU and Maximov, Ivan ^LU (2020) In Nanotechnology 31(32).
- Contribution to journal › Article
Mark Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction
Dzhigaev, Dmitry ^LU ; Svensson, Johannes ^LU ; Krishnaraja, Abinaya ^LU ; Zhu, Zhongyunshen ^LU ; Ren, Zhe ^LU ; Liu, Yi ^LU ; Kalbfleisch, Sebastian ^LU ; Björling, Alexander ^LU ; Lenrick, Filip ^LU and Balogh, Zoltan Imre , et al. (2020) In Nanoscale 12(27). p.14487-14493
- Contribution to journal › Article
Mark Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization
Persson, Anton E.O. ^LU ; Athle, Robin ^LU ; Littow, Pontus ; Persson, Karl Magnus ^LU ; Svensson, Johannes ^LU ; Borg, Mattias ^LU and Wernersson, Lars Erik ^LU (2020) In Applied Physics Letters 116(6).
- Contribution to journal › Article
Mark Vertical nanowire III–V MOSFETs with improved high-frequency gain
Kilpi, Olli-Pekka ^LU ; Hellenbrand, Markus ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2020) In Electronics Letters 56(13). p.669-671
- Contribution to journal › Article
2019
Mark Integration of InSb on Si by Rapid Melt Growth
Menon, Heera ^LU ; Svensson, Johannes ^LU ; Wernersson, Lars-Erik ^LU ; Borg, Mattias ^LU ; Steer, Matthew and Thayne, Iain (2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
Mark Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) In Applied Physics Letters 115(14).
- Contribution to journal › Article
Mark Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
Krishnaraja, Abinaya ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) 21th International Vacuum Congress
- Contribution to conference › Abstract
Mark Comparison of Low-Frequency Noise in Nanowire and Planar III-V MOSFETs
Hellenbrand, Markus ^LU ; Kilpi, Olli-Pekka ^LU ; Svensson, Johannes ^LU ; Lind, Erik ^LU and Wernersson, Lars-Erik ^LU (2019) Insulating Films on Semiconductors (INFOS)
- Contribution to conference › Paper, not in proceeding

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